Description:

The IRF740 is a high-power N-channel MOSFET, designed for high-speed switching and power applications. With a drain-source voltage rating of 400V and a continuous drain current of 10A, this transistor is perfect for power conversion, DC-DC converters, uninterruptible power supplies (UPS), and other industrial applications. Its high dissipation capability and low on-resistance make it ideal for handling high current efficiently in demanding environments.

Features:

• Drain-Source Voltage (V_DS): 400V, providing reliable operation under high voltage conditions.

• Gate-Source Voltage (V_GS): ±20V for safe and effective gate control.

• Continuous Drain Current (I_D): 10A at Tc = 25°C, ideal for continuous high current applications.

• Pulsed Drain Current (I_DM): 40A for dynamic, high-speed switching applications.

• Total Power Dissipation (P_tot): 125W at Tc = 25°C, with a derating factor of 1.0W/°C for efficient heat management.

• Operating Junction Temperature (T_j): Max. 150°C, ensuring high thermal tolerance.

• Storage Temperature (T_stg): -65°C to 150°C for broad environmental compatibility.

Electrical Specifications:

• V_DS (Drain-Source Voltage): 400V

• V_GS (Gate-Source Voltage): ±20V

• I_D (Continuous Drain Current): 10A at Tc = 25°C

• I_DM (Pulsed Drain Current): 40A

• P_tot (Total Power Dissipation): 125W at Tc = 25°C

• Derating Factor: 1.0W/°C

Applications:

• High Current Switching: Ideal for circuits requiring high-current switching operations.

• Uninterruptible Power Supply (UPS): Suitable for backup power systems.

• DC-DC Converters: Used in power conversion systems for telecom, industrial, and lighting equipment.

• Power Conversion: Perfect for use in power systems and converters.

Package Includes:

• 5x IRF740 N-channel MOSFET transistors.

• 1x Heatsink compound (for effective heat dissipation).

• 5x Heatsinks (for mounting each transistor).

• 5x Screws (for secure mounting).

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