The L14G1 is an NPN silicon phototransistor designed for detecting infrared (IR) light, typically used in object detection, optoelectronic switches, and light sensing applications. It features high sensitivity to IR wavelengths around 880nm and is optimized for use in both analog and digital detection systems.
Features:
High sensitivity to infrared light (880nm)
Narrow 20° viewing angle for focused detection
Low dark current for better signal-to-noise ratio
Suitable for reflective and transmissive sensing setups
Compact and durable package ideal for embedded applications
Product Specification:
Wavelength Sensitivity: 880nm
Viewing Angle: 20°
Collector-Emitter Breakdown Voltage (max): 45V
Dark Current (max): 100nA
Maximum Power Dissipation: 300mW
Phototransistor Type: NPN
Package Type: Typically through-hole (TO-18 or epoxy lens)
Application:
Infrared object detection
Line-following robots
Optical encoders
Photointerrupter modules
Ambient light sensing
Disclaimer:
Product details, specifications, and colors may change from time to time without prior notice depending on batch updates or improvements.
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